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Product Detailed Parameters
- Description：MOSFET N-CH 600V 2.8A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：354 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：41W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMN60H3D5SK3-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) rating of 600 V and a continuous drain current (I_D) of 2.8 A at 25°C. The device utilizes a TO-252 surface-mount package, also known as DPAK-3/2. Key electrical characteristics include a maximum on-resistance (R_DS(on)) of 3.5 Ω at a gate-source voltage of 10 V. The component is designed for high-reliability applications with a junction temperature range extending up to 150°C.
Feature Summary
- High-voltage capability suitable for power switching applications
- Surface-mount construction for automated assembly
- Integrated body diode for inductive load handling
Applications
- DC-DC converter circuits
- Motor control systems
- Power management modules
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with Diodes Incorporated before integration. Confirm that the TO-252 footprint matches your PCB design requirements. Ensure thermal management strategies account for the specified power dissipation limits under actual operating conditions.
Selection Notes
Select this component when a 600 V breakdown voltage is required in a compact surface-mount form factor. Compare R_DS(on) values against alternative packages if lower conduction losses are critical. Verify that the 2.8 A current rating meets the peak and continuous load demands of the target circuit design.
Part Context
This part belongs to the DMN60 series of N-channel MOSFETs from Diodes Incorporated. The series offers various voltage and current combinations within the TO-252 package. The suffix -13 typically indicates tape and reel packaging for high-volume manufacturing processes.
Replacement Considerations
Consult official substitution guides for equivalent parts with matching 600 V ratings and compatible pinouts. Verify thermal resistance parameters to ensure similar performance in existing designs.
