DMN61D9UDWQ-13

$0.03

Description：MOSFET 2N-CH 60V 0.318A SOT363
Series：-

SKU:d1ce17c7aa5b Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.318A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：318mA (Ta)
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：39pF @ 30V
Power - Max：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：Automotive
Qualification：AEC-Q101

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DMN61D9UDWQ-13

Overview

The DMN61D9UDWQ-13 is a dual N-channel enhancement mode MOSFET in an SOT-363 package. It features a drain-source voltage of 60V and a continuous drain current of 318mA at 25°C. The on-resistance is 2Ω at VGS=5V, 2.5Ω at VGS=2.5V, and 3.5Ω at VGS=1.8V. Total power dissipation is 0.37W to 0.44W depending on mounting. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Dual N-channel configuration with low on-resistance for efficient switching
Low gate threshold voltage enabling operation with low drive signals
AEC-Q101 qualified and PPAP capable for automotive applications
Ultra-small surface mount package with ESD protection

Applications

Motor control circuits
Power management functions
Automotive electronic systems

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if utilized in automotive manufacturing environments. Ensure compatibility with IATF 16949 certified facility production protocols.

Selection Notes

Select this component when a compact dual N-channel solution is required for automotive-grade designs. The device supports low-voltage logic interfaces due to its low gate threshold voltage. Consider the thermal resistance characteristics and package size constraints when designing the printed circuit board layout for optimal heat dissipation.

Part Context

This part belongs to the DMN61 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It is designed specifically to meet stringent automotive industry requirements. The device utilizes a molded plastic case material classified as UL 94V-0 flammability rated.