ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 340MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：340mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.4 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：28.5 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：320mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
Download product information
Overview
The DMN61D9UW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and a continuous drain current of 340mA. The device exhibits a maximum on-resistance of 1.2 Ohms at 5V gate drive. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 440mW. Packaged in an SOT-323-3 surface-mount case, it includes a gate-source voltage limit of ±20V and a typical gate charge of 400pC.
Feature Summary
- Single N-channel enhancement mode configuration for discrete switching applications
- SOT-323-3 surface-mount package design for compact board space utilization
- Wide operating junction temperature range supporting extreme thermal environments
Applications
- General purpose low-power switching circuits
- Battery protection modules requiring small form factor components
- Signal level translation interfaces
Procurement Notes
Verify component authenticity through authorized distribution channels only. Confirm RoHS compliance status via the official datasheet before integration. Check manufacturing lifecycle status as end-of-life indications may affect long-term supply stability. Validate package marking codes against official specifications to prevent counterfeit substitution during assembly.
Selection Notes
Select this component when a single N-channel MOSFET with moderate voltage ratings is required. The 1.2 Ohm on-resistance suits low-current applications where efficiency losses are minimal. Ensure the SOT-323-3 footprint matches the PCB layout constraints. Consider the 340mA current limit for load requirements exceeding standard logic-level outputs.
Part Context
This part belongs to the DMN61D9U series from Diodes Incorporated, focusing on small-signal MOSFET solutions. The series emphasizes compact packaging and reliable performance for consumer electronics. It serves as a discrete alternative to integrated driver solutions in cost-sensitive designs requiring basic transistor functionality.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical parameters carefully if considering generic equivalents from other manufacturers.
