ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH X1-DFN1212-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4V
- Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：31 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：480mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1212-3
- Package / Case：3-UDFN
Download product information
Overview
The DMN62D0LFD-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an X1-DFN1212-3 surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 310 mA. Its on-resistance is specified at 2 Ohms, with a gate-source voltage range of -12 V to +12 V. The threshold voltage is typically 1 V, and the total gate charge is 500 pC. Power dissipation reaches 800 mW, operating within a temperature range of -55 C to +150 C.
Feature Summary
- Single N-channel enhancement mode configuration for efficient switching control
- Compact X1-DFN1212-3 surface-mount package design suitable for space-constrained applications
- Silicon-based construction ensuring reliable performance across wide temperature ranges
Applications
- Battery protection circuits requiring low on-resistance
- Load switch implementations in portable electronic devices
- General-purpose switching applications in consumer electronics
Procurement Notes
Verify the specific suffix designation against official Diodes Incorporated documentation to confirm packaging and reel specifications. Ensure compatibility with required thermal management standards for the X1-DFN1212-3 package. Cross-reference electrical parameters with the latest datasheet to validate performance under intended operating conditions before integration into final designs.
Selection Notes
Select this component when a compact N-channel MOSFET with moderate current handling capabilities is required. The X1-DFN1212-3 package offers a small footprint compared to traditional SOT packages. Consider the 2 Ohm on-resistance and 310 mA current limit for appropriate load matching. Verify that the 60 V breakdown voltage aligns with system voltage requirements.
Part Context
This part belongs to the DMN62D0L series from Diodes Incorporated, designed as a general-purpose small-signal MOSFET. The family focuses on providing efficient switching solutions in minimal surface area packages. The DMN62D0LFD-13 variant specifically denotes the X1-DFN1212-3 package configuration with tape and reel delivery options for automated assembly processes.
Replacement Considerations
Consult official manufacturer substitution guides for verified equivalents. Direct replacements must match the N-channel enhancement mode type, 60 V rating, and compatible package dimensions. Verify pinout compatibility and electrical parameter alignment before implementing any substitute components in existing circuit designs.
