DMN62D0LFD-7

Overview

The DMN62D0LFD-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 310 mA at +25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 2 Ω at Vgs = 4 V and 2.5 Ω at Vgs = 2.5 V. It operates within a junction temperature range of -55°C to +150°C, with a maximum power dissipation of 0.48 W and thermal resistance of 265 °C/W.

Feature Summary

• Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
• Includes integrated electrostatic discharge (ESD) protection circuitry.
• Constructed using lead-free materials that are fully RoHS compliant, halogen-free, and antimony-free.

Applications

• DC-DC Converters
• Power Management Functions
• Battery Operated Systems
• Solid-State Relays
• Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify the specific ordering suffix when purchasing components. The suffix '-7' indicates packaging in reels of 3,000 units, while the suffix '-13' denotes reels containing 10,000 units. Confirm the exact package type and quantity requirements before placing orders to ensure compatibility with automated assembly equipment and inventory constraints.

Selection Notes

Select this component for designs requiring a compact single N-channel MOSFET with low input capacitance and fast switching speeds. Ensure the gate drive voltage meets the minimum threshold requirements for the desired load current. Verify that the PCB layout accommodates the X1-DFN1212-3 package dimensions and provides adequate copper area for thermal dissipation to maintain safe operating temperatures.

Part Context

This part belongs to the DMN62 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the X1-DFN1212-3 case style, which is a molded plastic surface-mount package designed for space-constrained electronic circuits. The device is constructed using silicon technology and is intended for general-purpose switching and amplification tasks in consumer and industrial electronics.

Replacement Considerations

Direct replacements must match the 60 V drain-source voltage rating, 310 mA continuous drain current capability, and the X1-DFN1212-3 footprint. Verify that alternative devices offer comparable on-resistance values at similar gate voltages and fit within the same thermal and electrical specifications.

FAQ

What is the maximum allowable gate-source voltage?

The absolute maximum rating for the gate-source voltage (VGSS) is ±20 V.

How does the on-resistance vary with temperature?

The on-resistance increases as the junction temperature rises. Graphical data in the datasheet illustrates this positive temperature coefficient behavior across the operating range.

Is this component suitable for automotive applications?

For automotive applications requiring specific change control or qualification to AEC-Q100/101/200 standards, customers must contact Diodes Incorporated directly, as standard parts may not meet these specific requirements.