DMN62D0U-7

$0.14

Description：MOSFET N-CH 60V 380MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4c8e2da0d31c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 380MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：32 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：380mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN62D0U-7

Overview

The DMN62D0U-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT23 package. It features a drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers a maximum on-resistance (RDS(ON)) of 2Ω at VGS = 4.5V with a continuous drain current (ID) of 380mA, or 2.5Ω at VGS = 2.5V with an ID of 340mA. Total power dissipation is rated at 380mW under steady-state conditions at +25°C ambient temperature. The junction-to-ambient thermal resistance is 338°C/W. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input capacitance
ESD protection up to 1kV
Totally lead-free and fully RoHS compliant

Applications

Motor controls
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix to confirm packaging quantity and carrier type. The DMN62D0U-7 designation indicates a tape and reel configuration with a packing quantity of 3000 units. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free specifications, before finalizing procurement orders.

Selection Notes

Select this component when a compact N-channel MOSFET with a 60V breakdown voltage is required. Ensure the application gate drive voltage supports the specified RDS(ON) performance levels. Verify that the thermal design accommodates the 338°C/W junction-to-ambient resistance for the expected duty cycle and ambient temperature conditions.

Part Context

This part belongs to the DMN62D0U series of N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency applications requiring small form factors and robust electrical characteristics within the 60V voltage class.