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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.35A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：350mA
- Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：32pF @ 30V
- Power - Max：320mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN62D0UDW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers a maximum static drain-source on-resistance (RDS(on)) of 2.0Ω at VGS = 4.5V with a continuous drain current (ID) of 350mA at +25°C, or 2.5Ω at VGS = 2.5V with an ID of 300mA. Total power dissipation is rated at 320mW to 410mW depending on PCB mounting conditions. The component utilizes an SOT363 surface-mount package.
Feature Summary
- Dual N-channel configuration in an ultra-small surface mount package
- Low on-resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gates
Applications
- Motor control circuits
- Power management functions
- High-efficiency power management applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity. The -7 suffix indicates a tape and reel quantity of 3,000 units, while the -13 suffix corresponds to 10,000 units per reel. Confirm that the required packaging format aligns with manufacturing equipment capabilities before finalizing procurement orders.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching applications. Ensure the design accommodates the thermal resistance characteristics, as power dissipation limits are sensitive to PCB copper coverage. Verify that the gate drive voltage meets the threshold requirements for the desired on-resistance performance level.
Part Context
This part belongs to the DMN62D0U series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The standard version is distinct from automotive-grade variants which carry a Q-suffix and adhere to AEC-Q standards.
Replacement Considerations
The DMN62D0UDWQ is the automotive-compliant alternative within the same family. Verify if AEC-Q qualification or IATF 16949 manufacturing certification is required for the target application before selecting the standard industrial grade part.
