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DMN62D0UW-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 60V 340MA SOT323. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN62D0UW-13
- Description：MOSFET N-CH 60V 340MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：340mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：32 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：320mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
Single FETs, MOSFETs datasheet and documents for DMN62D0UW-13
Single FETs, MOSFETs Overview
The DMN62D0UW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage rating of ±20V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 2Ω at VGS = 4.5V with a continuous drain current of 340mA, or 2.5Ω at VGS = 2.5V with 300mA. Total power dissipation is rated at 320mW in steady state and 470mW for short durations. The component utilizes an SOT323 package and operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-resistance design combined with superior switching performance for high efficiency applications
- ESD protected gate structure with low input/output leakage characteristics
- Totally lead-free and fully RoHS compliant construction
- Qualified to JEDEC standards for high reliability
Single FETs, MOSFETs Applications
- Motor controls
- Power management functions
- Backlighting
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the standard SOT323 package variant meets the required PCB layout guidelines for thermal dissipation. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling processes.
Single FETs, MOSFETs Selection Notes
Select this component when a compact single N-channel solution is required for 60V logic-level switching. Evaluate the RDS(ON) specifications against the target gate drive voltage to ensure adequate current handling. Consider the SOT323 package constraints for thermal management in space-limited designs.
Single FETs, MOSFETs Part Context
This part belongs to the DMN62D0U series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed as a surface-mount device intended for general-purpose switching applications where low on-state resistance and fast switching speeds are critical for system efficiency.
Single FETs, MOSFETs Replacement Considerations
The automotive-compliant variant DMN62D0UWQ is available under a separate datasheet. Verify pinout compatibility and electrical parameter alignment before substituting with other single N-channel MOSFETs in the same voltage class.
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