DMN62D1LFD-7

$0.10

Description：MOSFET N-CH 60V 400MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:cd4911f2d355 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 400MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4V
Rds On (Max) @ Id, Vgs：2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.55 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1212-3
Package / Case：3-UDFN

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DMN62D1LFD-7

Overview

The DMN62D1LFD-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN1212-3 surface-mount package. It features a drain-source voltage (V_DSS) of 60 V and a continuous drain current (I_D) of 400 mA at +25°C. The device exhibits a maximum on-resistance (R_DS(ON)) of 2 Ω at V_GS = 4 V and 2.5 Ω at V_GS = 2.5 V. Gate threshold voltage ranges from 0.6 V to 1 V. Total gate charge is typically 0.55 nC at V_GS = 4.5 V. Power dissipation is rated at 0.5 W with a thermal resistance of 237 °C/W. Operating temperature spans -55°C to +150°C.

Feature Summary

Low on-state resistance for high efficiency power management
Fast switching speed with low input capacitance
ESD protected structure
Totally lead-free and fully RoHS compliant

Applications

DC-DC Converters
Power Management Functions
Battery Operated Systems
Solid-State Relays
Drivers for relays, solenoids, lamps, and displays

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets JEDEC standards for high reliability if required by the design specifications. Ensure the application environment remains within the specified operating temperature range of -55°C to +150°C to maintain performance integrity.

Selection Notes

Select this component for applications requiring a compact U-DFN1212-3 footprint with moderate current handling capabilities up to 400 mA. Consider the R_DS(ON) values at specific gate voltages when designing drive circuits. Verify compatibility with FR-4 PCB layouts using minimum recommended pad dimensions to achieve the specified thermal resistance and power dissipation ratings.

Part Context

This part belongs to the DMN62 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for use in high-efficiency power management applications where small form factors are critical.