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Product Detailed Parameters
- Description：MOSFET N-CH 60V 410MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：410mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 40mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：80 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：470mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1006-3
- Package / Case：3-UFDFN
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Overview
The DMN62D1SFB-7B is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X1-DFN1006-3 package. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 0.41 A at +25°C. The device offers a maximum on-resistance (Rds(on)) of 1.4 Ω at Vgs = 10 V and 1.6 Ω at Vgs = 4.5 V. Power dissipation is rated at 0.47 W with a thermal resistance (RθJA) of 258 °C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Ultra-small footprint of 0.6mm² for space-constrained designs
- Low on-resistance optimized for high-efficiency power management
- Fast switching speed with low gate threshold voltage
- ESD protected gate rated at 200 V
Applications
- Load switches
- Portable applications
- Power-management functions
Procurement Notes
Verify the specific ordering suffix '-7B' against official Diodes documentation to confirm packaging details, such as reel size and tape width, prior to procurement. Ensure compliance with RoHS and halogen-free requirements by checking the manufacturer's quality definitions. Confirm that the component meets JEDEC standards for high reliability if required for the intended application environment.
Selection Notes
Select this component when a compact form factor is critical, given its significantly smaller footprint compared to standard SOT23 packages. Consider the 60 V rating and 0.41 A current capability for low-power switching tasks. Evaluate the thermal performance based on the 258 °C/W junction-to-ambient resistance and ensure adequate PCB pad layout to maintain optimal heat dissipation during operation.
Part Context
This part belongs to the DMN62 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated under the DiodesZetex brand. The series focuses on providing low on-state resistance while maintaining superior switching performance. These devices are designed for general-purpose use in portable electronics and power management circuits requiring small surface-mount solutions.
Replacement Considerations
For automotive applications requiring specific change control or qualification to AEC-Q standards, refer to the related automotive grade parts with the Q-suffix. Verify pinout compatibility and electrical parameters before substituting with other X1-DFN1006-3 packaged MOSFETs.
