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Product Detailed Parameters
- Description：LINEAR IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：528mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 40mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：43 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：500µW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：U-DFN1006-3/SWP (Type UX)
- Package / Case：3-UFDFN
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Overview
The DMN62D1SFBW-7B is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a breakdown voltage (Vdss) of 60 V and a continuous drain current (Id) of 528 mA at ambient temperature. The device utilizes a U-DFN1006-3/SWP (UX type) package, providing a compact form factor with wettable flanks for improved solder joint inspection. Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±20 V and a power dissipation rating of 500 mW. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low gate threshold voltage design for efficient drive compatibility
- Wettable flank package construction facilitating automated optical inspection
- Enhancement mode N-channel operation for switching applications
Applications
- Battery protection circuits
- Load switch implementations
- General purpose low-side switching
Procurement Notes
Verify the specific suffix 'W' indicates the wettable flank variant when sourcing replacements. Confirm RoHS3 compliance status through official manufacturer documentation prior to integration. Ensure the ordering part number matches the exact package style required for the PCB footprint. Cross-reference datasheet revisions to confirm parameter consistency across production batches.
Selection Notes
Select this component where space constraints necessitate the X1-DFN or U-DFN1006-3 footprint. The low gate threshold voltage makes it suitable for logic-level driving from microcontrollers. Consider the thermal performance limits defined by the 500 mW dissipation rating in high-current scenarios. Verify that the 60 V rating provides adequate margin for the target application's supply voltage.
Part Context
This part belongs to the DMN62 series of single N-channel MOSFETs from Diodes Incorporated. The series offers various current and package options tailored for portable electronics and battery-powered devices. The DMN62D1SFBW-7B specifically addresses the need for inspectable solder joints in high-reliability assemblies through its specialized wettable flank packaging technology.
Replacement Considerations
Direct substitutes must match the U-DFN1006-3/SWP package and 60V/528mA specifications. Generic DFN1006-3 parts without wettable flanks may not be interchangeable if inspection requirements exist. Verify pinout compatibility and thermal resistance values before substitution.
