DMN62D2U-13

$0.04

Description：2N7002 FAMILY SOT23 T&R 10K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a395d16e43e4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：2N7002 FAMILY SOT23 T&R 10K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：390mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN62D2U-13

Overview

The DMN62D2U-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers low on-state resistance, specified as 2.0Ω at VGS=5.0V with a continuous drain current (ID) of 390mA at +25°C. Key electrical parameters include a gate threshold voltage (VGS(TH)) of 1.0V maximum, total gate charge (Qg) of 0.8nC, and input capacitance (Ciss) of 41pF. Thermal characteristics provide a junction-to-ambient thermal resistance (RθJA) of 238°C/W under steady state conditions.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
Includes an integrated gate protection diode and is fully ESD protected.
Compliant with RoHS directives and halogen/antimony-free standards.

Applications

Motor controls
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental compliance standards, specifically RoHS and lead-free requirements, before finalizing procurement specifications.

Selection Notes

Select this component when a 60V N-channel MOSFET in an SOT23 package is required for low-current applications. Ensure the design accommodates the 2.0Ω on-resistance at 5V drive and the 390mA continuous current limit. Verify that the thermal dissipation capabilities align with the system's ambient temperature constraints.

Part Context

This part belongs to the DMN62D2U family of single N-channel enhancement mode MOSFETs. It is distinct from dual-channel variants such as the DMN62D2UDW and automotive-grade versions like the DMN62D2UQ. The standard industrial version is packaged in SOT23.

Replacement Considerations

An equivalent parametric replacement is available under the part number DMN62D2U-7, which shares the same semiconductor specifications but utilizes a 3,000-unit tape and reel carrier.