DMN62D2UQ-7

$0.03

Description：2N7002 FAMILY SOT23 T&R 3K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:8db33ece4864 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：2N7002 FAMILY SOT23 T&R 3K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：390mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Download product information

DMN62D2UQ-7

Overview

The DMN62D2UQ is a 60V N-channel enhancement mode MOSFET designed for automotive applications. It is qualified to AEC-Q101 and manufactured in IATF 16949 certified facilities. The device features low on-resistance, with maximum values of 2.0Ω at VGS=5.0V, 2.5Ω at VGS=2.5V, and 4.0Ω at VGS=1.8V. Continuous drain current reaches 390mA at TA=+25°C. Operating temperature ranges from -55°C to +150°C.

Feature Summary

AEC-Q101 qualified for automotive reliability
Low input capacitance and fast switching speed
ESD protected structure
Totally lead-free and fully RoHS compliant

Applications

Motor controls
Power management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) against the required packing quantity before purchase. Confirm that the component meets the PPAP requirements if mandated by your supply chain standards. Ensure the SOT23 package dimensions align with your PCB footprint design. Check for any recent product change notices regarding manufacturing location or material composition updates.

Selection Notes

Select this component when an automotive-grade N-channel MOSFET with a 60V breakdown voltage is required. Consider the low gate threshold voltage for compatibility with lower drive voltages. Evaluate the thermal resistance characteristics against your expected power dissipation levels. Verify that the continuous drain current rating satisfies the load requirements under your operating conditions.

Part Context

This part belongs to Diodes Incorporated's DMN series of N-channel enhancement mode MOSFETs. It utilizes silicon technology and is housed in a compact SOT23 surface-mount package. The device is specifically engineered to meet stringent automotive industry standards, distinguishing it from general-purpose industrial transistors through its qualification and manufacturing certifications.