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Product Detailed Parameters
- Description：2N7002 FAMILY SOT523 T&R 10K
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：334mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：400mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN62D2UT-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT523 package. It features a maximum drain-source breakdown voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device offers low on-resistance, with RDS(ON) values of 2.0Ω at VGS=5.0V, 2.5Ω at VGS=2.5V, and 4.0Ω at VGS=1.8V. Continuous drain current (ID) reaches 334mA at TA=+25°C. Key electrical parameters include a gate threshold voltage (VGS(TH)) max of 1.0V, total gate charge (Qg) typ. 0.8nC, and input capacitance (Ciss) typ. 41pF. Operating temperature range spans -55°C to +150°C.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input/output leakage
- ESD protected up to 2kV with integrated gate protection diode
- Totally lead-free and fully RoHS compliant
Applications
- Motor controls
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required JEDEC standards for high reliability if applicable to your design. Ensure the SOT523 package dimensions align with your PCB footprint requirements. Check for any automotive grade alternatives if AEC-Q qualification is necessary for your application.
Selection Notes
Select this component when a compact SOT523 package is required for 60V N-channel switching applications. Consider the low gate threshold voltage for compatibility with low-voltage logic drivers. Evaluate the thermal resistance characteristics against your expected power dissipation levels. Compare the on-resistance specifications across different gate drive voltages to ensure optimal performance within your circuit constraints.
Part Context
This part belongs to the DMN62D series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device utilizes silicon technology and is housed in a molded plastic SOT523 package with matte tin annealed terminals over an alloy 42 leadframe.
Replacement Considerations
Check for equivalent parametric replacements listed by distributors. Verify pinout compatibility and package dimensions before substitution. Ensure replacement parts meet or exceed the original BVDSS, ID, and RDS(ON) specifications.
