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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.455A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：455mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 30V
- Power - Max：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN62D2UVTQ-7 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 60V drain-source voltage and operates within a -55°C to +150°C junction temperature range. The device offers low on-resistance, with maximum values of 2.0Ω at VGS=5.0V, 2.5Ω at VGS=2.5V, and 4.0Ω at VGS=1.8V. Continuous drain current reaches 455mA at 25°C. Packaged in a TSOT26 surface-mount format, it supports AEC-Q101 qualification and PPAP requirements.
Feature Summary
- AEC-Q101 qualified and PPAP capable for automotive use
- Low gate threshold voltage for efficient drive control
- Fast switching speed with low input capacitance
- ESD protected and fully RoHS compliant
Applications
- General-purpose interfacing switches
- Power-management functions
- Automotive electronic circuits requiring specific change control
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS44921 Rev. 2-2. Confirm that the part number suffix matches the required tape and reel quantity. Ensure the supplier provides traceability documentation consistent with IATF 16949 certified manufacturing facilities. Validate that the received units meet the specified electrical characteristics before integration into production systems.
Selection Notes
Select this component when designing circuits requiring dual N-channel MOSFETs in a compact TSOT26 package. It is suitable for applications needing low on-resistance at various gate voltages. Consider its thermal resistance and power dissipation limits relative to the expected operating environment. Verify compatibility with automotive reliability standards if used in vehicle electronics.
Part Context
This dual N-channel MOSFET belongs to Diodes Incorporated's automotive-grade discrete semiconductor portfolio. It utilizes silicon technology optimized for high performance and reliability. The TSOT26 package allows for space-constrained PCB layouts while maintaining robust electrical characteristics suitable for demanding industrial and automotive environments.
Replacement Considerations
Consult the manufacturer's official substitution guide for verified alternatives. Cross-reference pin configurations and electrical parameters carefully. Ensure any replacement maintains AEC-Q101 compliance if automotive usage is required.
