DMN63D1L-7

Description：MOSFET N-CH 60V 380MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:1a5cf66a3a80 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 380MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：0.3 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：30 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN63D1L-7

Overview

The DMN63D1L-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-23 package. It features a drain-source voltage rating of 60V and a continuous drain current of 380mA at +25°C ambient temperature. The device exhibits a maximum on-resistance of 2Ω at VGS=10V and 3Ω at VGS=5V. Total power dissipation is rated at 370mW, with an operating junction temperature range from -55°C to +150°C. Gate-source voltage limits are ±20V, and the component is qualified to AEC-Q101 standards.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Includes integrated gate protection diode and ESD protection up to 2kV.
Constructed with molded plastic 'Green' compound that is halogen and antimony free.
Qualified to AEC-Q101 standards for high reliability automotive applications.

Applications

Motor Control
Power Management Functions
Backlighting

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. The '-7' designation indicates a 3000-unit tape and reel configuration. Confirm RoHS compliance and lead-free status requirements against project specifications. Ensure the SOT-23 footprint aligns with the suggested pad layout provided in manufacturer documentation AP02001.

Selection Notes

Select this component when a low-voltage N-channel switch is required for compact designs. The SOT-23 package suits space-constrained PCB layouts. Evaluate thermal constraints carefully as the steady-state power dissipation is limited to 370mW. Consider the 2Ω on-resistance at 10V drive for standard logic-level control circuits.

Part Context

This part belongs to the DMN63 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on balancing low on-resistance with fast switching capabilities. The DMN63D1L variant specifically targets general-purpose switching and power management tasks within the 60V voltage class.

Replacement Considerations

The DMN63D1L-13 serves as a direct replacement offering identical electrical characteristics but utilizes a 10000-unit tape and reel packaging format instead of the 3000-unit reel found in the DMN63D1L-7.