DMN65D8LFB-7B

$0.14

Description：MOSFET N-CH 60V 260MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:dfa450584d9e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 260MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：3Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：25 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：430mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1006-3
Package / Case：3-UFDFN

Download product information

DMN65D8LFB-7B

Overview

The DMN65D8LFB-7B is an N-channel enhancement mode field-effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 400mA at 25°C. The device offers a low on-state resistance of 3.0Ω at VGS=10V and 4.0Ω at VGS=5V. Packaged in an X1-DFN1006-3 surface-mount case, it operates within a temperature range of -55°C to +150°C. The component is supplied in tape and reel packaging with a quantity of 10,000 units per reel.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input capacitance
ESD protected gate up to 1.2kV HBM
Totally lead-free and fully RoHS compliant

Applications

DC-DC Converters
Power Management Functions
Battery Operated Systems
Solid-State Relays Drivers

Procurement Notes

Verify the specific ordering suffix '-7B' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the X1-DFN1006-3 package dimensions align with the target PCB footprint. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling procedures.

Selection Notes

Select this component for applications requiring compact surface-mount solutions with low conduction losses. Evaluate thermal performance based on the specified junction-to-ambient resistance values under different PCB copper coverage conditions. Consider the gate threshold voltage characteristics for compatibility with low-voltage logic drivers.

Part Context

This part belongs to the DMN65D8LFB series of N-channel MOSFETs from Diodes Incorporated. It utilizes the X1-DFN1006-3 package, which provides a small-surface mount form factor suitable for space-constrained designs. The series is engineered to minimize on-state resistance while maintaining superior switching performance.