DMN65D8LQ-7

$0.11

Description：MOSFET N-CH 60V 310MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:710d81eb8839 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 310MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：3Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.87 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN65D8LQ-7

Overview

The DMN65D8LQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT23 surface-mount package with a drain-source breakdown voltage (V(BR)DSS) of 60 V and a maximum gate-source voltage (VGSS) of ±20 V. The device provides a continuous drain current (ID) of 310 mA at TA = +25°C when driven at VGS = 10V, or 270 mA at VGS = 5V. The static drain-source on-resistance (RDS(ON)) is specified as 3 Ω max at VGS = 10V and 4 Ω max at VGS = 5V. Total power dissipation reaches 540 mW on an FR-4 substrate, with an operating junction temperature range from -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure
Qualified to AEC-Q101 standards for automotive reliability

Applications

DC-DC Converters
Power Management Functions
Battery Operated Systems
Solid-State Relays
Drivers for relays, solenoids, lamps, and displays

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements if environmental regulations apply to the assembly process. Ensure the selected variant aligns with the required automotive qualification standards if utilized in vehicle electronics.

Selection Notes

Select this component for applications requiring a compact SOT23 footprint with moderate current handling capabilities up to 310 mA. The dual RDS(ON) specifications support both standard 10V logic drive and lower 5V logic drive scenarios. Verify thermal constraints against the 540 mW dissipation rating based on the PCB copper pad layout and ambient operating conditions.

Part Context

This part belongs to the DMN65 series of N-channel enhancement mode MOSFETs designed by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The DMN65D8LQ-7 specifically utilizes the SOT23 case style, distinguishing it from other series members that may utilize different packages like SC-88 or PowerDI.