DMN65D8LT-7

Overview

The DMN65D8LT-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a compact SOT523 package. It features a drain-source voltage rating of 60V and a maximum continuous drain current of 210mA at +25°C. The device offers low on-state resistance, specified as 5Ω max at VGS=10V and 6Ω max at VGS=5V. Key electrical characteristics include a gate threshold voltage range of 1.2V to 2.0V, input capacitance of 24pF, and total gate charge of 0.4nC. It operates within a junction temperature range of -55°C to +150°C and includes ESD protection up to 1kV.

Feature Summary

• Designed for high-efficiency power management with minimized on-state resistance while maintaining superior switching performance.
• Includes internal gate protection diode providing ESD protection up to 1kV.
• Totally lead-free and fully RoHS compliant, with halogen and antimony-free green device construction.

Applications

• Motor Control
• Power Management Functions

Procurement Notes

Verify the specific ordering suffix when purchasing. The DMN65D8LT-7 variant comes in a tape and reel packaging format containing 3000 units per reel. Confirm that the component matches the required SOT523 case style and ensure compatibility with standard surface mount assembly processes. Check for any automotive qualification requirements if the application demands AEC-Q101 compliance or IATF 16949 manufacturing certification.

Selection Notes

Select this component for applications requiring a small form factor N-channel MOSFET with moderate voltage handling capabilities. The SOT523 package is suitable for space-constrained designs. Consider the 60V breakdown voltage and 210mA current limit to ensure adequate headroom for the intended load. The low gate threshold voltage facilitates drive from low-voltage logic interfaces, while the thermal resistance values indicate suitability for low-power dissipation scenarios.

Part Context

This part belongs to Diodes Incorporated's line of N-channel enhancement mode MOSFETs. It is manufactured using advanced silicon gate technology to achieve low on-resistance and fast switching speeds. The product is designed to meet environmental standards including RoHS and WEEE directives. The marking code '58D' identifies the product type, while date codes indicate production year and month.

Replacement Considerations

Check datasheets for alternative N-channel MOSFETs in SOT523 packages with similar BVDSS and RDS(ON) specifications. Verify pinout compatibility (Gate, Source, Drain) before substitution. Ensure thermal characteristics and maximum ratings of potential replacements match or exceed those of the DMN65D8LT-7 for the specific application environment.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (BVDSS) is rated at 60V.

Is the device suitable for high-temperature environments?

Yes, the operating junction temperature range extends up to +150°C.

Does the component include built-in ESD protection?

Yes, the device features an integrated gate protection diode offering ESD protection up to 1kV.