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Product Detailed Parameters
- Description：MOSFET N-CH 60V 335MA SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：335mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.4 nC @ 4.5 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：270mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN65D9L-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT23 surface-mount package. It features a drain-source breakdown voltage (BVDSS) of 60V and a maximum continuous drain current (ID) of 335mA at +25°C. The device offers low on-state resistance, specified as 4.0Ω max at VGS=10V, 4.1Ω max at VGS=5V, and 4.2Ω max at VGS=4V. Total gate charge (Qg) is typically 0.4nC. Thermal characteristics include a junction-to-ambient thermal resistance (RθJA) of 293°C/W on FR-4 PCB with minimum pad layout, and 186°C/W on high copper coverage. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Low on-resistance design for efficient power management
- Fast switching speed with low input capacitance
- ESD protected structure
- Totally lead-free and fully RoHS compliant
Applications
- Motor control circuits
- Power management functions
- Backlighting applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all applicable environmental directives, including RoHS and halogen-free requirements, before finalizing procurement. Ensure compatibility with standard SMD/SMT assembly processes and check moisture sensitivity levels for storage and handling protocols.
Selection Notes
Select this component for applications requiring a compact single N-channel MOSFET with a 60V rating. Consider the low gate charge and fast switching characteristics for high-efficiency designs. Evaluate the thermal resistance values against the expected power dissipation and PCB copper area to ensure reliable operation within the specified temperature range.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are designed to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management applications where small form factors and low cost are critical.
Replacement Considerations
Consult official Diodes Incorporated documentation or authorized distributors for verified substitute part numbers. Do not assume cross-compatibility based solely on pinout or general electrical ratings without verifying detailed specifications.
