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Product Detailed Parameters
- Description：MOSFET N-CH 60V 115MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 115mA, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：23 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN66D0LW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60 V and a continuous drain current of 115 mA. The device exhibits a maximum on-resistance of 6 Ohms with a gate threshold voltage up to 2 V. Power dissipation is rated at 250 mW, and the unit operates within a temperature range of -55 °C to +150 °C. It utilizes a SOT-363 (SC-88) surface-mount package with six pins.
Feature Summary
- Dual N-channel configuration for compact circuit integration
- Enhancement mode operation suitable for low-voltage switching
- Surface-mount design in a small footprint package
Applications
- Low-power signal switching circuits
- Battery protection modules
- Portable electronic device power management
Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm pinout and electrical tolerances. Ensure the ordering code matches the required tape-and-reel quantity specifications. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Selection Notes
Select this component for applications requiring dual N-channel isolation in minimal space. Evaluate the 6 Ohm on-resistance against load requirements to ensure acceptable voltage drop. Confirm that the 115 mA current rating exceeds peak operational demands while maintaining thermal stability within the specified junction temperature limits.
Part Context
This component belongs to the DMN series of dual MOSFETs from Diodes Incorporated. It provides an alternative to discrete single-transistor solutions by integrating two independent channels into one package. The series targets consumer electronics and portable devices where board space conservation is critical.
Replacement Considerations
Consult official substitution guides for verified equivalents. Verify compatibility regarding pin assignments and thermal characteristics when considering cross-brand alternatives.
