DMN67D7L-13

$0.19

Description：MOSFET N-CH 60V 210MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:79451b861e6a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 210MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.821 nC @ 10 V
Vgs (Max)：±40V
Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：570mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN67D7L-13

Overview

The DMN67D7L-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum continuous drain current of 210mA at +25°C and a typical on-resistance of 5Ω at VGS=10V. The device operates within a junction temperature range of -55°C to +150°C, with a total power dissipation of 340mW in steady state. Key electrical parameters include a gate-source voltage rating of ±40V, a breakdown voltage of 60V, and a total gate charge of 821pC at VGS=10V.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Totally lead-free and fully RoHS compliant, ensuring compliance with environmental directives.
Constructed as a halogen and antimony free green device utilizing molded plastic case material.

Applications

Motor control systems
Power management functions

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental standards such as RoHS and halogen-free status. Ensure compatibility with SOT23 surface mount assembly processes and validate thermal management requirements based on the specified power dissipation limits.

Selection Notes

Select this component for low-voltage switching applications requiring a 60V drain-source breakdown capability. Consider the package size and thermal characteristics when designing for space-constrained environments. Evaluate the gate threshold voltage and drive requirements to ensure efficient switching within the intended circuit topology.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance low on-resistance with fast switching speeds, targeting compact power management solutions. The series utilizes silicon technology housed in standard surface-mount packages suitable for automated assembly.

Replacement Considerations

Consult official substitution guides or datasheets for verified alternatives. Cross-reference key parameters including voltage ratings, current capabilities, and package dimensions before implementation.