DMN67D7L-7

$0.17

Description：MOSFET N-CH 60V 210MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:74e9f6b8c957 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 210MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.821 nC @ 10 V
Vgs (Max)：±40V
Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：570mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN67D7L-7

Overview

The DMN67D7L-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and a maximum continuous drain current of 210mA at +25°C. The device offers a typical on-resistance of 5Ω at VGS=10V and 3.2Ω at VGS=5V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 340mW in steady state. The component utilizes a SOT-23 surface-mount package.

Feature Summary

Low on-resistance for high efficiency power management
Fast switching speed with low input capacitance
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Motor control
Power management functions

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm packaging quantity and reel specifications. Ensure compliance requirements such as RoHS and halogen-free status align with project standards. Confirm that the SOT-23 package dimensions match the intended PCB footprint layout before finalizing procurement orders.

Selection Notes

Select this component for applications requiring a 60V N-channel MOSFET with moderate current handling capabilities. Consider the thermal resistance characteristics when designing heat dissipation strategies. Evaluate the gate threshold voltage requirements to ensure compatibility with the driving logic levels used in the target circuit design.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets compact designs where space constraints necessitate small surface-mount packages like SOT-23.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-reference electrical parameters such as breakdown voltage, on-resistance, and package type to ensure functional equivalence without modifying the existing circuit design or thermal management strategy.