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The DMN67D8LDW is a dual N-channel enhancement mode MOSFET in an SOT363 package. It features a 60V drain-source voltage rating and a maximum continuous drain current of 230mA at +25°C. The device offers low on-state resistance, specified as 5.0Ω max at VGS=10V and 7.5Ω max at VGS=5V. Key electrical parameters include a gate threshold voltage range of 1.0V to 2.5V, input capacitance of 22pF, and total gate charge of 361pC at VGS=4.5V. Thermal characteristics show a junction-to-ambient thermal resistance of 400°C/W on minimal PCB layouts.
Verify the specific ordering suffix (-7 or -13) against project requirements to ensure correct packaging quantity. Confirm that the SOT363 case material and terminal finish meet the assembly process specifications. Ensure the component's moisture sensitivity level and storage conditions align with the manufacturing timeline to prevent solderability issues during reflow processes.
Select this component when a compact dual MOSFET solution is required for low-current switching tasks. The 60V rating suits low-voltage DC-DC converters and battery-powered devices. Consider the 5.0Ω RDS(ON) limit for efficiency calculations at 10V drive levels. Verify that the 230mA continuous current capability meets the load requirements under expected operating temperatures.
This part belongs to Diodes Incorporated's DMN series of dual MOSFETs. It utilizes a molded plastic case with matte tin finish terminals. The device is lead-free, RoHS compliant, and halogen-free. The marking code '7D8' identifies the product type, while subsequent characters indicate the date code for traceability purposes.
Check datasheets for other DMN series parts with matching 60V ratings and SOT363 packages. Verify pinout compatibility and electrical parameter overlaps before substitution. Ensure any alternative maintains AEC-Q101 qualification if automotive reliability is required.