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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V 60V SOT523 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：210mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：821 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：260mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN67D8LT-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 60V and a maximum continuous drain current (ID) of 210mA at +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 5.0Ω at VGS=10V and 7.5Ω at VGS=5V. Gate-source voltage limits are ±20V, with a gate threshold voltage ranging from 1.0V to 2.5V. Total power dissipation is rated at 260mW in steady state, and the operating temperature range spans from -55°C to +150°C.
Feature Summary
- Designed for high efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Totally lead-free and fully RoHS compliant, ensuring compliance with environmental directives.
- Halogen and antimony free construction classifies the component as a "Green" device.
Applications
- Motor Control
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix "-13" corresponds to the required tape and reel packaging quantity of 10,000 units. Confirm that the SOT523 case material and matte tin annealed terminals meet the target assembly process requirements. Ensure the component's moisture sensitivity level 1 rating aligns with the facility's floor life constraints prior to soldering.
Selection Notes
Select this component when a compact single N-channel switch is required for low-current applications up to 210mA. The 60V breakdown voltage provides adequate headroom for standard low-voltage systems. Consider the relatively high RDS(ON) compared to larger packages; ensure thermal dissipation capabilities within the SOT523 footprint support the intended duty cycle and ambient temperature conditions.
Part Context
This part belongs to the DMN67 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the SOT523 surface-mount package, offering a small form factor suitable for space-constrained designs. The series is engineered to balance low on-resistance with fast switching characteristics for efficient power control.
Replacement Considerations
The DMN67D8LT-7 is a verified substitute offering identical electrical specifications but packaged in a 3,000-unit tape and reel format instead of the 10,000-unit configuration found in the -13 variant.
