DMN67D8LW-13

$0.16

Description：MOSFET N-CH 60V 240MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:91825522ce65 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 240MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.82 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：320mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN67D8LW-13

Overview

The DMN67D8LW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 60 V and a continuous drain current (ID) of 240 mA at +25°C. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 5.0 Ω at VGS = 10V and 7.5 Ω at VGS = 5V. Total gate charge (Qg) is specified as 821 pC at VGS = 10V. The component operates within a junction temperature range of -55°C to +150°C and utilizes an SOT-323 surface-mount package.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Qualified to AEC-Q101 standards for high reliability in automotive environments.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.
Features low input capacitance and fast switching speed characteristics.

Applications

Motor Control
Power Management Functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration. Confirm that the required operating environment meets the AEC-Q101 qualification standards if used in automotive contexts. Ensure PCB layout adheres to the recommended pad dimensions provided in application notes AP02001 to achieve the specified thermal dissipation ratings.

Selection Notes

Select this component when a compact SOT-323 footprint is required for low-current switching tasks. The dual RDS(ON) specifications allow optimization for either 5V or 10V logic drive levels. Consider the 240 mA continuous current limit and 320 mW power dissipation rating against the specific load requirements and ambient thermal conditions of the target circuit design.

Part Context

This part belongs to the DMN67 series of N-channel MOSFETs from Diodes Incorporated. The 'DMN67D8LW' denotes the base device with specific electrical parameters, while the '-13' suffix indicates the standard 10000-piece reel packaging format. It is distinct from other variants such as the DMN67D8LDW-7, which utilizes a different SOT-363 dual-transistor package.