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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V TO220-3 T
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：68 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：72.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4260 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The DMN68M7SCT is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a TO-220AB package. It features a drain-source voltage (BVDSS) of 68V and a maximum continuous drain current (ID) of 100A at +25°C case temperature. The static drain-source on-resistance (RDS(ON)) is specified as 8.0mΩ max at VGS=10V and ID=20A. The device supports a pulsed drain current (IDM) of 400A and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Designed for high-efficiency power management with minimized on-state resistance and superior switching performance.
- Manufactured using lead-free finish materials that are RoHS compliant, halogen-free, and antimony-free.
- Verified for reliability through 100% Unclamped Inductive Switching (UIS) testing during production.
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix 'SCT' against official documentation to confirm tube packaging containing 50 pieces per unit. Ensure compliance requirements match project needs, specifically checking for AEC-Q100/101/200 qualification if automotive applications are intended. Confirm thermal management capabilities align with infinite heatsink assumptions found in datasheet ratings.
Selection Notes
Select this component for applications requiring robust current handling up to 100A and low conduction losses indicated by the 8.0mΩ RDS(ON). Consider the TO-220AB package for through-hole mounting and effective heat dissipation. Evaluate gate charge parameters for switching frequency requirements and ensure the 68V rating provides adequate margin over the system's operating voltage.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed to balance low on-resistance with efficient switching characteristics. The product line targets general-purpose power management solutions where high current capacity and thermal stability are critical design factors.
Replacement Considerations
Consult official Diodes Incorporated substitution guides or contact local representatives for verified equivalent parts. Do not assume cross-compatibility based solely on similar electrical ratings without verifying pinout configuration, package dimensions, and thermal resistance specifications.
FAQ
What is the maximum pulsed drain current supported by the DMN68M7SCT?
The device supports a pulsed drain current (IDM) of 400A, defined by a 10μs pulse duration with a 1% duty cycle.
Is the DMN68M7SCT suitable for automotive applications?
For automotive applications requiring specific change control, such as AEC-Q100/101/200 qualification and PPAP capability, customers must contact Diodes Incorporated directly to verify availability and manufacturing facility certification.
