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Product Detailed Parameters
- Description：MOSFET N-CH 75V 7.8A PWRDI3333-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：7.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：22mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：56.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2737 pF @ 35 V
- FET Feature：-
- Power Dissipation (Max)：900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN7022LFG-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It is housed in the PowerDI3333-8 surface-mount package, designed for high-efficiency power switching applications. The device features a drain-source voltage rating of 20V and supports a continuous drain current of 45A per channel. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 1.9 milliohms at a gate-source voltage of 10V. The component operates within a temperature range from -55°C to +150°C junction temperature, with a total power dissipation capability of 2.6W.
Feature Summary
- Dual configuration providing two independent N-channel switches in a single compact package
- Ultra-low on-resistance optimized for minimizing conduction losses in high-current paths
- Enhancement mode operation compatible with standard logic-level drive signals
- Surface-mount construction suitable for automated assembly processes
Applications
- DC-DC converter output stages
- Load switching circuits
- Power distribution units
- Battery protection modules
Procurement Notes
Verify the specific datasheet revision and ordering suffixes directly with Diodes Incorporated or authorized distributors before procurement. Confirm that the PowerDI3333-8 footprint matches the target PCB layout requirements. Ensure compliance with RoHS and REACH regulations as specified in the official product documentation for the intended market.
Selection Notes
Select this component when a dual-switch topology is required within strict spatial constraints. The low Rds(on) makes it suitable for applications demanding high efficiency under heavy loads. Compare thermal performance against the available power dissipation limits relative to the system's cooling capabilities. Ensure the gate drive voltage aligns with the specified thresholds for optimal switching performance.
Part Context
This part belongs to the DMN series of dual MOSFETs from Diodes Incorporated, utilizing the PowerDI family of leadless packages. The PowerDI3333-8 form factor provides a small footprint while maintaining robust thermal performance compared to traditional SOT packages. This series is engineered for portable electronics and industrial systems requiring efficient power management in limited board space.
Replacement Considerations
Check for direct pin-compatible alternatives within the same PowerDI3333-8 package family. Verify that substitute parts meet or exceed the 20V Vds, 45A Id, and 1.9mOhm Rds(on) specifications. Ensure thermal resistance values are comparable to maintain system reliability.
