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Product Detailed Parameters
- Description：MOSFET N-CHANNEL 950V ITO220AB
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：950 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.9 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：470 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：30W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：ITO-220AB
- Package / Case：TO-220-3 Full Pack, Isolated Tab
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Overview
The DMN95H8D5HCTI is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 950V and a continuous drain current (ID) of 2.5A at TC = +25°C. The device has a maximum static drain-source on-resistance (RDS(ON)) of 7Ω at VGS = 10V and ID = 1A. It operates within a junction temperature range of -55°C to +150°C and is housed in an ITO220AB (Type TH) package.
Feature Summary
- Low input capacitance for fast switching performance
- High BVDSS rating suitable for power applications
- Low input/output leakage characteristics
- Lead-free finish with RoHS compliance
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix 'I' against official Diodes documentation, as datasheets may reference alternative packaging or variants like 'CT'. Confirm that the component meets required environmental standards such as RoHS 3 and halogen-free specifications before procurement. Ensure compatibility with intended thermal management solutions given the through-hole package constraints.
Selection Notes
Select this component for high-voltage applications requiring robust blocking capabilities up to 950V. Consider the relatively high on-resistance when evaluating conduction losses in low-current scenarios. Verify gate drive requirements align with the specified threshold voltage and total gate charge parameters for optimal switching efficiency.
Part Context
This part belongs to the DMN95 series of complementary dual MOSFETs from Diodes Incorporated. It is designed for high-efficiency power management applications. The device utilizes a molded plastic case material classified as UL 94V-0 flammability rated. Terminals are matte tin finished over a copper leadframe, ensuring solderability per MIL-STD-208.
Replacement Considerations
The datasheet explicitly states: NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART. No verified substitute part numbers are provided in the official documentation.
