DMNH10H021SPSW-13

$0.53

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:60a8c4db0a6b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：71 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3789 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：1.8W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMNH10H021SPSW-13

Overview

The DMNH10H021SPSW-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of 100V and a maximum continuous drain current (ID) of 58A at 25°C case temperature. The device exhibits a static drain-source on-resistance (RDS(ON)) of 28mΩ max at VGS=10V and ID=20A. It supports an operating junction temperature range of -55°C to +175°C.

Feature Summary

Designed for high efficiency power management with minimized on-state resistance and superior switching performance.
Rated for operation up to +175°C, suitable for high ambient temperature environments.
Features wettable flanks to improve optical inspection capabilities during manufacturing.
Manufactured using lead-free, halogen-free, and antimony-free materials compliant with RoHS directives.

Applications

Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, including RoHS compliance and the specified halogen/antimony-free definitions. Ensure the selected part matches the PowerDI5060-8 (SWP) mechanical outline dimensions for proper PCB footprint compatibility.

Selection Notes

Select this component when a 100V rating and low RDS(ON) are required for efficient power conversion. Consider the thermal characteristics, specifically the junction-to-case resistance, for heat dissipation planning. Verify that the gate threshold voltage aligns with the driving circuit's logic levels. Evaluate the package size against available board space constraints.

Part Context

This part belongs to the DMNH series of N-channel MOSFETs by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package, which provides a thermally efficient design. The series targets applications demanding high conversion efficiency and robust performance under varying thermal conditions.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers within the same product family or equivalent specifications. Cross-reference electrical parameters such as BVDSS, ID, and RDS(ON) carefully before substitution.