DMNH10H028SK3-13

$1.37

Description：MOSFET N-CH 100V 55A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d667c2a44904 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 55A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2245 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMNH10H028SK3-13

Overview

The DMNH10H028SK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 100V and a maximum continuous drain current (ID) of 55A at TC = +25°C. The device has a static drain-source on-resistance (RDS(ON)) of 28mΩ maximum at VGS = 10V and ID = 20A. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO252 (DPAK) package.

Feature Summary

Rated for operation up to +175°C, suitable for high ambient temperature environments
Features 100% unclamped inductive switching testing for robust end applications
Low gate charge minimizes switching losses during operation

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2500 units as documented in the official datasheet. Confirm that the component meets RoHS compliance and is halogen-free if required by your manufacturing standards. Ensure the design accommodates the specified thermal resistance values for the intended mounting conditions.

Selection Notes

Select this component when a 100V N-channel MOSFET with low on-resistance is required for power management circuits. Consider the +175°C rating for applications involving elevated ambient temperatures. Verify that the TO252 package dimensions fit the available PCB layout space and that the gate drive voltage supports the specified RDS(ON) performance levels.

Part Context

This part belongs to the DMNH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed for high-efficiency power management applications. The device is qualified to JEDEC standards for high reliability and is distinct from its automotive-compliant counterpart, the DMNH10H028SK3Q.