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Product Detailed Parameters
- Description：MOSFET BVDSS: 101V~250V POWERDI5
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：90mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：989 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMNH15H110SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI5060-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 150 V and supports a continuous drain current (Id) of 27 A. Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±20 V, a gate threshold voltage (Vgs th) of 4 V, and a gate charge (Qg) of 8.8 nC. It operates within a temperature range of -55°C to +175°C junction temperature.
Feature Summary
- Single N-channel configuration with enhancement mode operation for efficient switching control.
- High thermal stability supporting a maximum junction temperature of +175°C.
- Low gate charge design facilitating reduced switching losses and improved drive efficiency.
- Robust construction using silicon technology for reliable performance in power applications.
Applications
- DC-DC converter circuits requiring high-voltage isolation and efficient power transfer.
- Motor driver stages utilizing single-ended or half-bridge topologies.
- Power supply output stages in industrial equipment and consumer electronics.
Procurement Notes
Verify the complete part number including the suffix '-13' to ensure correct tape-and-reel packaging specifications. Confirm that the PowerDI5060-8 footprint matches your PCB layout requirements. Check for RoHS compliance documentation if environmental regulations apply to your specific manufacturing region. Ensure sourcing from authorized distributors to guarantee component authenticity and traceability.
Selection Notes
Select this component when a 150 V rating and 27 A continuous current capacity are required in a compact surface-mount form factor. Consider the low gate charge for applications demanding faster switching speeds or lower driver power consumption. Evaluate the thermal performance relative to your system's heat dissipation capabilities, as the PowerDI5060-8 package offers specific thermal resistance characteristics compared to through-hole alternatives.
Part Context
This component belongs to the DMNH series of N-channel MOSFETs from Diodes Incorporated, designed for general-purpose power switching applications. The series emphasizes high reliability and compact sizing suitable for modern electronic devices. The DMNH15H110SPS-13 specifically targets mid-range voltage applications where space constraints and thermal management are critical design factors.
Replacement Considerations
Cross-reference with DMTH15H053SPSWQ-13 for similar voltage ratings but different current and resistance profiles. Verify pin compatibility and thermal characteristics before substituting any alternative components to ensure circuit integrity.
