DMNH4005SCTQ

$1.23

Description：MOSFET N-CH 40V 150A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:f2ae3ff7d650 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 150A TO220AB
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：2846 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：165W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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DMNH4005SCTQ

Overview

The DMNH4005SCTQ is a 40V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage of 40V and a continuous drain current of 150A at TC = +25°C. The device exhibits a typical on-resistance of 3.4mΩ at VGS = 10V and ID = 20A, with a maximum rating of 4.0mΩ. It operates within a junction temperature range of -55°C to +175°C and utilizes a TO-220AB package.

Feature Summary

Qualified to AEC-Q101 standards for high reliability in automotive environments
Low input capacitance and low input/output leakage characteristics
Lead-free finish compliant with RoHS directives
Halogen and antimony free "Green" device construction

Applications

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging details and compliance status. Ensure that the procurement channel is authorized to prevent counterfeit components. Confirm that the delivered units match the exact part number specifications required for the intended application design.

Selection Notes

Select this component when an N-channel MOSFET with a 40V breakdown voltage and high current handling capability is required. The TO-220AB package provides robust thermal performance suitable for power management functions. Verify that the gate drive voltage supports the specified RDS(ON) ratings for optimal efficiency in the target circuit design.

Part Context

This component belongs to the DMNH series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is engineered to meet stringent automotive requirements, supported by PPAP documentation. It serves as a discrete semiconductor solution for switching and amplification tasks in demanding electronic systems.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts, electrical parameters, and package dimensions before implementation.