DMNH4005SPSW-13

$0.60

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:53fdf2218023 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：2847 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.6W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMNH4005SPSW-13

Overview

The DMNH4005SPSW-13 is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 40V and a static drain-source on-resistance (RDS(ON)) of 4.0mΩ at VGS = 10V. The device supports a continuous drain current (ID) of 120A at TC = +25°C and a pulsed drain current (IDM) of 150A. Total gate charge (Qg) is 48nC at VGS = 10V. Operating temperature range extends from -55°C to +175°C.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features 100% unclamped inductive switching capability for robust end applications
Low RDS(ON) minimizes power losses during conduction
Low Qg minimizes switching losses

Applications

Motor controls
Power supplies
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit reel packaging configuration as documented in the official datasheet. Confirm that the PowerDI5060-8/SWP package type matches the required footprint for the target PCB layout. Ensure compliance with RoHS and halogen-free requirements if mandated by the final assembly specifications.

Selection Notes

Select this component when a low-profile solution under 1.1mm is required for thin applications. Consider the 40V rating and 120A continuous current capacity for high-efficiency power management designs. Evaluate thermal resistance values based on the specific copper area and board layer configuration used in the design.

Part Context

This part belongs to the DMNH series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8/SWP package, which provides a compact form factor suitable for space-constrained designs. The device is designed to minimize on-state resistance while maintaining superior switching performance.