DMNH4006SPSQ-13

$1.70

Description：MOSFET N-CH 40V 110A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8b2d432db997 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 110A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50.9 nC @ 10 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：2280 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMNH4006SPSQ-13

Overview

The DMNH4006SPSQ-13 is a surface-mount N-channel MOSFET in a PowerDI5060-8 package. It features a drain-source voltage (V_DSS) of 40 V and a continuous drain current (I_D) of 110 A at TC = +25°C. The maximum on-resistance (R_DS(ON)) is 7.0 mΩ at V_GS = 10 V. Total gate charge (Q_g) is 50.9 nC at V_GS = 10 V. The device supports an operating junction temperature range from -55°C to +175°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications.
Rated for operation up to +175°C junction temperature.
Features 100% unclamped inductive switching testing for robustness.
Low R_DS(ON) and low Q_G characteristics minimize power and switching losses.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the complete part number includes the '-13' suffix, which indicates the standard 2,500-unit reel packaging configuration. Confirm that the specific application requires the 40V rating and 110A current capacity defined in the datasheet. Ensure design parameters align with the specified thermal resistance values for the intended PCB layout conditions.

Selection Notes

Select this component when designing circuits requiring high reliability in automotive environments. The PowerDI5060-8 package offers a profile under 1.1 mm, suitable for space-constrained designs. Verify that the gate drive voltage meets the 10 V requirement for optimal on-resistance performance. Consider the thermal management requirements associated with the specified power dissipation ratings.

Part Context

This device belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It is manufactured in IATF 16949 certified facilities. The product utilizes silicon technology and is housed in a molded plastic PowerDI package. It is designed to meet stringent automotive industry requirements for quality and durability.

Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Cross-referencing should be performed carefully as pinouts, electrical limits, and package dimensions must match exactly. Generic equivalents may not satisfy AEC-Q101 qualification or PPAP requirements.