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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1405 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMNH4011SPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 40V and a low on-state resistance (RDS(ON)) of 10mΩ at VGS = 10V. The device supports a continuous drain current of up to 80A at TC = +25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a PowerDI5060-8/SWP form factor, it includes an exposed drain pad for thermal efficiency.
Feature Summary
- Engineered for high conversion efficiency with minimized on-state losses
- Rated for operation in high ambient temperature environments up to +175°C
- Features 100% unclamped inductive switching capability for robust end applications
- Utilizes a thermally efficient package profile under 1.1mm for thin designs
Applications
- Engine-management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required reel quantity of 2,500 units. Confirm that the PowerDI5060-8/SWP package type matches the PCB footprint requirements. Ensure compliance with RoHS and halogen-free specifications if mandated by the target application standards.
Selection Notes
Select this component when a 40V N-channel MOSFET with high current handling and low RDS(ON) is required. Consider the +175°C rating for high-temperature automotive or industrial environments. Evaluate the PowerDI5060-8 package dimensions against available board space constraints.
Part Context
This part belongs to the DMNH series of N-channel MOSFETs from Diodes Incorporated. It shares the PowerDI5060-8 package family with other devices like the DMTH4011SPD-13 but offers distinct electrical characteristics tailored for high-efficiency power management applications.
Replacement Considerations
An automotive-compliant version is available as DMNH4011SPSWQ. Verify compatibility with existing gate drive voltages and thermal dissipation requirements before substituting.
