DMNH6008SPSQ-13-2485

$0.56

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:69799676dbc7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：16.5A (Ta), 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2597 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.6W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMNH6008SPSQ-13-2485

Overview

The DMNH6008SPSQ is a 60V N-channel enhancement mode MOSFET designed for automotive applications. It features an 8.0mΩ maximum on-resistance at VGS=10V and supports a continuous drain current of 16.5A at TA=+25°C. The device operates up to +175°C junction temperature and utilizes a PowerDI5060-8 package with a profile under 1.1mm.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Ensures reliable end applications through 100% unclamped inductive switching capability
Provides thermally efficient performance with low on-state losses and fast switching speed

Applications

Motor controls
DC-DC converters
Power management

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation, as suffixes determine packaging quantities and carrier types. Confirm AEC-Q101 qualification status and PPAP capability requirements directly with the manufacturer or authorized distributors before procurement.

Selection Notes

Select this component for designs requiring robust automotive-grade reliability and high thermal tolerance. Evaluate the PowerDI5060-8 package dimensions against board space constraints. Ensure gate drive voltages align with the specified threshold characteristics for optimal conduction efficiency.

Part Context

This part belongs to Diodes Incorporated's automotive MOSFET portfolio, manufactured in IATF16949 certified facilities. It is specifically engineered to meet stringent automotive industry standards, offering enhanced durability compared to standard commercial grade transistors.

Replacement Considerations

Consult official Diodes Incorporated substitution guides for verified alternatives. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, voltage ratings, and thermal resistance parameters.