DMNH6011LK3-13

$0.46

Description：MOSFET N-CH 55V 80A TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:28d659a0bcee Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 80A TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：49.1 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：3077 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMNH6011LK3-13

Overview

The DMNH6011LK3-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a TO252 (DPAK) surface-mount package. It features a drain-source breakdown voltage of 55V and a maximum continuous drain current of 80A at +25°C case temperature. The device offers a low static drain-source on-resistance of 12mΩ at VGS=10V and 18mΩ at VGS=4.5V. It supports an operating junction temperature range up to +175°C and includes a built-in body diode.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Guaranteed 100% unclamped inductive switching capability for robust end applications
Low input capacitance combined with low on-resistance for efficient power management
Qualified to AEC-Q101 standards for automotive-grade reliability

Applications

Power Supplies
Motor Control
DC-DC Converters

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the TO252 (DPAK) package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-case resistance values under your expected duty cycles.

Selection Notes

Select this component when designing circuits requiring high efficiency and superior switching performance within a 55V system. Consider its +175°C rating for applications exposed to elevated temperatures. Evaluate the gate charge parameters against your driver capabilities to optimize switching speeds and minimize losses.

Part Context

This part belongs to Diodes Incorporated's advanced generation MOSFET lineup designed to minimize on-state resistance while maintaining excellent switching characteristics. It serves as a standard commercial version, distinct from the automotive-compliant variant designated by the 'Q' suffix in the ordering information.

Replacement Considerations

The DMNH6011LK3Q-13 is the automotive-compliant equivalent available under a separate data sheet. Verify if AEC-Q101 qualification is required for your specific application environment before selecting a substitute.