DMNH6011LK3Q-13

$0.55

Description：MOSFET N-CH 55V 80A TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:bf4ecd27e064 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 80A TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：49.1 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：3077 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMNH6011LK3Q-13

Overview

The DMNH6011LK3Q-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 55V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum continuous drain current of 80A at 25°C case temperature, with a static drain-source on-resistance of 12mΩ at VGS=10V and 18mΩ at VGS=4.5V. Packaged in a TO252 (DPAK) surface-mount housing, it is supplied in tape and reel quantities of 2,500 units.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards with PPAP capability.
Rated for operation in high ambient temperature environments up to +175°C.
Features 100% unclamped inductive switching testing for robust end-application reliability.

Applications

Engine management systems
Body control electronics
DC/DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required 2,500-unit tape and reel packaging configuration. Confirm that the component meets IATF 16949 manufacturing facility requirements if your supply chain mandates automotive-grade change control protocols. Ensure the selected package variant aligns with your PCB footprint specifications.

Selection Notes

Select this component when designing circuits requiring low on-resistance for efficient power switching in automotive environments. Consider the thermal resistance characteristics and the exposed drain pad layout for optimal heat dissipation. Verify gate drive voltage compatibility, as on-resistance varies significantly between 4.5V and 10V gate-source conditions.

Part Context

This part belongs to the DMNH series of N-channel MOSFETs from Diodes Incorporated. It is designed specifically for automotive use, distinguishing itself through AEC-Q101 qualification and PPAP support. The product utilizes a standard TO252 package, offering a balance of current handling and thermal performance suitable for compact electronic assemblies.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters such as breakdown voltage, on-resistance, and package dimensions to ensure functional equivalence without compromising system safety or performance.

FAQ

Is the DMNH6011LK3Q-13 qualified for automotive applications?

Yes, the device is qualified to AEC-Q101 standards and is supported by a PPAP, making it suitable for automotive applications requiring specific change control.