DMNH6012SPS-13

$1.30

Description：MOSFET N-CH 60V 50A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a25c67405e6e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 50A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：11mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：35.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1926 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMNH6012SPS-13

Overview

The DMNH6012SPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 50A at 25°C case temperature. The device exhibits a typical static drain-source on-resistance of 8mΩ at VGS=10V, with a maximum rating of 11mΩ. Total gate charge is specified as 16.3nC at VGS=4.5V and 35.2nC at VGS=10V. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8 surface-mount package.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features 100% unclamped inductive switching testing for robust end applications
Designed with low on-state resistance to minimize power losses
Incorporates low gate charge characteristics to reduce switching losses

Applications

Power-management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the complete part number includes the suffix -13 to confirm tape and reel packaging quantities. Confirm RoHS compliance and halogen-free status requirements against specific project standards. Ensure thermal management design accounts for the specified thermal resistance values under intended mounting conditions. Validate that the PowerDI5060-8 footprint matches the manufacturer's suggested pad layout guidelines.

Selection Notes

Select this component when a 60V N-channel MOSFET with high current capability and low on-resistance is required. Consider the PowerDI5060-8 package profile for thin application constraints. Evaluate the thermal performance based on the specific PCB copper area and heat dissipation capabilities available in the target design environment.

Part Context

This device belongs to the DMNH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the PowerDI5060-8 package form factor with other parts in the lineup but differs in electrical ratings such as on-resistance and current handling capacity. The series targets high-efficiency power management solutions requiring compact footprints.

Replacement Considerations

An automotive-compliant version of this component is available under the separate part number DMNH6012SPSQ. Verify if automotive qualification standards are required for the specific application before selecting this alternative.

FAQ

Is the DMNH6012SPS qualified for automotive applications?

The standard DMNH6012SPS is not explicitly stated as automotive-qualified in the provided datasheet. An automotive-compliant variant exists under the separate part number DMNH6012SPSQ.