DMNH6012SPSQ-13-2485

$0.51

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:6794acfcd03f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：11mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：35.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1926 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.6W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMNH6012SPSQ-13-2485

Overview

The DMNH6012SPSQ-13-2485 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (V_DSS) of 60V and a continuous drain current (I_D) of 50A at +25°C case temperature. The maximum static drain-source on-resistance (R_DS(ON)) is 11mΩ at V_GS = 10V and I_D = 50A. The device supports an operating junction temperature range of -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments
Features 100% unclamped inductive switching capability for robust end applications
Low gate charge minimizes switching losses during operation
Package profile under 1.1mm, designed for thin application constraints

Applications

DC motor controls
Solenoid driving
Power-management functions

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and carrier type. Ensure compliance with AEC-Q101 qualification and PPAP requirements if the target application mandates automotive change control standards. Confirm that the PowerDI5060-8 package dimensions align with the intended PCB layout constraints.

Selection Notes

Select this component when a low-profile, automotive-grade N-channel MOSFET is required for high-current switching applications. The 60V rating and 50A continuous current capacity make it suitable for power management and motor control circuits. Verify thermal management strategies to maintain junction temperatures within the specified -55°C to +175°C range during operation.

Part Context

This part belongs to Diodes Incorporated's PowerDI series of surface-mount MOSFETs. The PowerDI5060-8 package provides a compact form factor with enhanced thermal performance compared to traditional packages. The product line is designed to meet stringent automotive reliability standards, offering lead-free and halogen-free construction for environmentally compliant designs.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-referencing requires matching voltage, current, R_DS(ON), and package specifications to ensure functional compatibility without compromising automotive qualification status.