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Product Detailed Parameters
- Description：MOSFET N-CH 60V 50A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：23mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1143 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMNH6021SK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 50A at TC = +25°C. The device exhibits a maximum static drain-source on-resistance (RDS(ON)) of 23mΩ at VGS = 10V and 28mΩ at VGS = 4.5V. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO252 (DPAK) surface-mount package.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- Qualified to AEC-Q101 standards for automotive-grade reliability
- 100% unclamped inductive switching (UIS) tested in production
- Lead-free finish with RoHS compliance and halogen/antimony-free composition
Applications
- Power management systems
- Solenoid driving circuits
- Motor control applications
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the base part number matches the exact electrical specifications required for your design, as variations may exist across different manufacturing revisions or alternative suffixes.
Selection Notes
Select this component when a 60V N-channel MOSFET with low on-resistance and high thermal tolerance is required. Ensure the gate drive voltage aligns with the specified RDS(ON) test conditions (10V or 4.5V). Verify that the TO252 package dimensions and thermal resistance characteristics fit the PCB layout and cooling constraints of the target application.
Part Context
This part belongs to the DMNH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The 'SK3' designation indicates the specific TO252 (DPAK) case style and lead configuration. The product line emphasizes minimized on-state resistance while maintaining superior switching performance for efficient power management solutions.
Replacement Considerations
The datasheet notes that an automotive-compliant version is available under the separate part number DMNH6021SK3Q. Verify if the Q-suffix variant meets specific automotive qualification requirements beyond the standard AEC-Q101 rating listed for this component.
