DMNH6021SK3Q-13

$0.44

Description：MOSFET N-CH 60V 50A TO252-2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2625edabf631 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 50A TO252-2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1143 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMNH6021SK3Q-13

Overview

The DMNH6021SK3Q-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +175°C. The device provides a maximum continuous drain current of 50A at 25°C case temperature, with a static drain-source on-resistance of 23mΩ at VGS=10V and 28mΩ at VGS=4.5V. Packaged in a TO252 (DPAK) housing, it is supplied in tape and reel quantities of 2,500 units.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards with PPAP capability.
Rated for high ambient temperature environments up to +175°C junction temperature.
Manufactured in IATF 16949 certified facilities to support specific change control requirements.
Features low on-resistance and fast switching speed characteristics.

Applications

Power management systems
Driving solenoids
Motor control circuits

Procurement Notes

Verify the component against the official datasheet DS38701 Rev. 6 - 2 to confirm electrical parameters and package dimensions. Ensure the selected variant matches the required thermal resistance and current ratings for the specific application environment. Confirm compliance with RoHS 3 and REACH directives as specified by the manufacturer.

Selection Notes

Select this component for designs requiring robust performance in high-temperature automotive environments. Consider the thermal resistance values when designing heat dissipation strategies. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to the DMNH6021 series of N-channel MOSFETs from Diodes Incorporated. It is designed specifically for automotive-grade applications requiring high reliability and stringent quality controls. The product is supported by comprehensive documentation including datasheets and mechanical drawings.

Replacement Considerations

Consult the manufacturer's documentation for equivalent parts or direct replacements. Verify pinout compatibility and electrical specifications before substituting any other components in existing designs.