ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 55A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：23mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1016 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta), 53W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
Download product information
Overview
The DMNH6021SPSQ-13 is a 60V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source voltage (BVDSS) of 60V and operates up to +175°C junction temperature. At VGS=10V, the static on-resistance (RDS(ON)) is typically 12mΩ with a maximum of 23mΩ at ID=12A. Continuous drain current reaches 55A at TC=+25°C. The device supports 100% unclamped inductive switching with an avalanche energy rating of 64mJ.
Feature Summary
- Qualified to AEC-Q101 standards for automotive reliability
- Rated for operation in high ambient temperature environments up to +175°C
- Ensures robust end applications through 100% unclamped inductive switching capability
- Minimizes on-state losses via low RDS(ON) characteristics
Applications
- Driving solenoids
- Driving relays
- Power-management functions
Procurement Notes
Verify the specific ordering suffix matches the required packing quantity and carrier type. Confirm that the component meets all applicable RoHS directives and halogen-free requirements for your assembly process. Ensure the manufacturing site aligns with any specific change control or PPAP documentation needs mandated by your automotive supply chain agreements.
Selection Notes
Select this component when designing circuits requiring high thermal stability and automotive-grade reliability. The low input capacitance and fast switching speed make it suitable for efficient power management. Consider the exposed drain pad for thermal dissipation if operating near maximum current ratings in constrained PCB layouts.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, manufactured in IATF 16949 certified facilities. It is designed to meet stringent automotive industry requirements, offering enhanced durability compared to standard industrial components. The PowerDI5060-8 package provides a compact solution with improved thermal performance for space-constrained designs.
Replacement Considerations
Check datasheet compatibility for pinout, voltage ratings, and thermal resistance before substituting. Verify that any alternative component meets the same AEC-Q101 qualification level and maintains equivalent unclamped inductive switching capabilities for safety-critical automotive applications.
