DMNH6021SPSWQ-13

$0.29

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:80ddb15f2580 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1132 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.6W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMNH6021SPSWQ-13

Overview

The DMNH6021SPSWQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +175°C. The device utilizes the PowerDI5060-8 package with wettable flank terminals. Electrical specifications include a maximum on-resistance of 23mΩ at VGS=10V and 28mΩ at VGS=4.5V, both measured at an ID of 12A. Continuous drain current ratings are 44A at TC=+25°C and 31A at TC=+100°C.

Feature Summary

Qualified to AEC-Q101 standards for automotive applications with PPAP capability.
Rated for operation in high ambient temperature environments up to +175°C.
Features wettable flank terminals designed to improve optical inspection reliability.
Manufactured in IATF 16949 certified facilities.

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify that the specific part number suffix matches the required packaging configuration. Confirm compliance with RoHS directives and halogen-free requirements as defined by the manufacturer's quality definitions. Ensure the procurement channel is authorized to guarantee product authenticity and traceability for automotive-grade components.

Selection Notes

Select this component when designing systems requiring robust thermal performance and high conversion efficiency. The low input capacitance and fast switching speed make it suitable for high-frequency power management applications. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.

Part Context

This component belongs to the DMNH series of N-channel MOSFETs from Diodes Incorporated. It is specifically engineered to meet stringent automotive industry requirements. The device integrates high-performance silicon technology within a compact surface-mount package designed for efficient heat dissipation and reliable long-term operation.

Replacement Considerations

Consult official substitution lists or contact the manufacturer directly for verified alternative part numbers. Do not assume cross-compatibility based solely on similar electrical parameters without verifying package dimensions and qualification standards.