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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：584 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMNH6042SPSWQ-13 is a single N-channel enhancement mode MOSFET rated for 60V drain-source voltage. It features a maximum on-resistance of 50mΩ at VGS=10V and 65mΩ at VGS=4.5V, supporting continuous drain currents of 24A and 21A respectively at +25°C case temperature. The device operates within a junction temperature range of -55°C to +175°C and utilizes a PowerDI5060-8/SWP package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive applications
- Rated for operation up to +175°C junction temperature
- Features wettable flanks to facilitate improved optical inspections
- Guaranteed 100% unclamped inductive switching reliability
Applications
- Engine-management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific suffix Q-13 against official Diodes Incorporated documentation to confirm AEC-Q101 qualification and IATF 16949 manufacturing compliance. Ensure the required thermal management aligns with the specified power dissipation limits for the target application environment.
Selection Notes
Select this component when high ambient temperatures require a +175°C rating or when automotive quality standards are mandatory. The low gate charge minimizes switching losses, while the wettable flank design supports automated optical inspection processes during assembly.
Part Context
This part belongs to the DMNH6042 series of N-channel MOSFETs from Diodes Incorporated. It is specifically engineered for robust performance in demanding environments, offering a balance of low conduction losses and high thermal stability within a compact surface-mount footprint.
Replacement Considerations
Direct substitutes must match the 60V rating, PowerDI5060-8/SWP package, and AEC-Q101 qualification. Verify that any alternative maintains equivalent RDS(ON) characteristics and thermal resistance values to ensure circuit compatibility.
