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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMNH6069SFVW-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 packaging and supports operation up to +175°C. Key electrical parameters include a maximum drain-source voltage of 60V, a continuous drain current of 18A at TC=+25°C, and a static drain-source on-resistance of 50mΩ at VGS=10V. The device features a total gate charge of 14nC at VGS=10V and operates within a temperature range of -55°C to +175°C.
Feature Summary
- Rated for high ambient temperature environments with an operating junction temperature up to +175°C
- Designed to minimize on-state resistance while maintaining superior switching performance
- Small form factor thermally efficient package enables higher density end products
- Compliant with JEDEC standards for high reliability
Applications
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 2,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS, halogen-free, and antimony-free requirements as defined by the manufacturer's green product standards. Ensure compatibility with the specified PowerDI3333-8 (SWP) case outline dimensions for PCB layout integration.
Selection Notes
Select this component for applications requiring low on-state losses and high thermal stability. The 60V rating and 18A continuous current capacity suit moderate power management tasks. Evaluate the 50mΩ on-resistance against system efficiency targets. Consider the small footprint benefits for space-constrained designs compared to traditional SO-8 packages.
Part Context
This part belongs to the DMNH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for high-efficiency power management applications where minimizing conduction losses is critical. The device is distinct from automotive-grade variants which require specific change control and AEC-Q qualification.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix. Verify pinout and thermal characteristics when substituting with other 60V MOSFETs in the PowerDI3333-8 package.
