DMP1007UCB9-7

$0.93

Description：MOSFET P-CH 8V 13.2A U-WLB1515-9
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:321eefe85f67 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 8V 13.2A U-WLB1515-9
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：8 V
Current - Continuous Drain (Id) @ 25°C：13.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：5.7mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.2 nC @ 4.5 V
Vgs (Max)：±6V
Input Capacitance (Ciss) (Max) @ Vds：900 pF @ 4 V
FET Feature：-
Power Dissipation (Max)：840mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-WLB1515-9 (Type C)
Package / Case：9-UFBGA, WLBGA

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DMP1007UCB9-7

Overview

The DMP1007UCB9-7 is a P-channel enhancement mode MOSFET utilizing third-generation lateral MOSFET (LD-MOS) technology. It features an ultra-low on-state resistance of 5.7mΩ at VGS = -4.5V and a gate charge of 8.2nC for fast switching. The device supports a drain-source voltage of -8V, continuous drain current up to -13.2A, and operates within a junction temperature range of -55°C to +150°C. Packaged in a compact U-WLB1515-9 footprint measuring 1.5mm x 1.5mm with a height of 0.62mm.

Feature Summary

Engineered LD-MOS technology minimizes on-state losses while enabling ultra-fast switching capabilities.
Chip-Scale Package design increases power density by combining low thermal impedance with minimal footprint area.
Low gate threshold voltage facilitates turn-on potential reduction for efficient control.

Applications

DC-DC Converters
Battery Management Systems
Load Switches

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 2/3 compliance standards and ensure the application environment remains within the specified -55°C to +150°C operating temperature limits. Cross-reference the datasheet revision for any updates to mechanical dimensions or electrical characteristics prior to finalizing procurement orders.

Selection Notes

Select this component when high efficiency and rapid switching are required in space-constrained designs. The low RDS(ON) value reduces conduction losses, making it suitable for battery-powered applications. Ensure the gate drive voltage aligns with the -4.5V specification to achieve optimal performance. Consider the thermal management requirements based on the specific PCB copper area utilized during mounting.

Part Context

This part belongs to Diodes Incorporated's DMP series of P-channel MOSFETs. It utilizes the U-WLB1515-9 package, also known as Chip-Scale Package (CSP), which provides a highly compact form factor. The device is designed specifically for high-efficiency power transfer applications where minimizing both electrical and physical footprint is critical.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without validating pin configurations, electrical ratings, and thermal characteristics against the original specifications.