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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V U-WLB1515-9
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：8 V
- Current - Continuous Drain (Id) @ 25°C：9.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：5.7mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.2 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：900 pF @ 4 V
- FET Feature：-
- Power Dissipation (Max)：840mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-WLB1515-9
- Package / Case：9-UFBGA, WLBGA
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Overview
The DMP1008UCB9-7 is a P-channel enhancement mode MOSFET utilizing third-generation LD-MOS technology. It features an -8V drain-source voltage and a maximum on-resistance of 5.7mΩ at VGS = -4.5V. The device supports a continuous drain current of -13.2A at +25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in a U-WLB1515-9 chip-scale format, it offers low thermal impedance and ultra-fast switching characteristics.
Feature Summary
- LD-MOS technology engineered for minimal on-state losses and ultra-fast switching speeds
- Chip-Scale Package (CSP) design combining low thermal impedance with high power density
- Low gate threshold voltage (-0.6V typical) enabling low turn-on potential
- Integrated ESD protection for the gate terminal
Applications
- DC-DC Converters
- Battery Management Systems
- Load Switching Applications
Procurement Notes
Verify component authenticity through authorized Diodes Incorporated channels or certified distributors. Confirm package marking codes match the U-WLB1515-9 specification and date code formats. Ensure compliance with RoHS 3 and halogen-free requirements as defined by the manufacturer. Validate that storage conditions adhere to J-STD-020 moisture sensitivity level 1 guidelines prior to soldering.
Selection Notes
Select this component for applications requiring high efficiency in compact form factors. The low RDS(ON) minimizes conduction losses, while the CSP footprint maximizes board space utilization. Consider the -8V rating for low-voltage power rails. Evaluate thermal management needs based on the specific PCB copper area and ambient operating temperatures.
Part Context
This part belongs to the DMP series of lateral MOSFETs from Diodes Incorporated. It represents a generation of devices optimized for high-density power management solutions. The U-WLB1515-9 package is designed to replace larger traditional packages while maintaining robust electrical performance and thermal dissipation capabilities.
Replacement Considerations
Direct substitutes must match the -8V rating, P-channel configuration, and U-WLB1515-9 footprint. Verify equivalent RDS(ON) and Qg values to ensure identical switching performance. Consult official cross-reference lists for confirmed compatible replacements.
