DMP1009UFDF-13

$0.12

Description：MOSFET P-CH 12V 15A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f571a094bb0a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 15A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：11mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1860 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMP1009UFDF-13

Overview

The DMP1009UFDF-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -12V drain-source voltage (BVDSS) and operates within a junction temperature range of -55°C to +150°C. The device utilizes a U-DFN2020-6 package with a 0.6mm profile. Key electrical parameters include a maximum on-resistance of 11mΩ at VGS = -4.5V and ID = -5A, and a continuous drain current of -11A at TA = +25°C. Total gate charge is specified as 44nC at VGS = -8V.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Features a low-profile 0.6mm case height suitable for space-constrained designs.
Utilizes a compact PCB footprint of 4mm².
Constructed with a green molding compound that is totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm compliance requirements such as RoHS and halogen-free status against project specifications. Ensure the U-DFN2020-6 mechanical dimensions align with the target PCB layout constraints. Validate thermal dissipation capabilities based on the intended copper area and ambient operating conditions.

Selection Notes

Select this component for applications requiring low on-resistance in a small form factor. Consider the -12V rating for low-voltage power rails. Evaluate the thermal resistance values relative to the available copper plane area on the printed circuit board. Compare gate charge characteristics against driver capabilities to ensure adequate switching speeds are achieved without excessive drive current requirements.

Part Context

This part belongs to the DMP1009 series of P-channel MOSFETs from Diodes Incorporated. It shares the same die and electrical characteristics as the DMP1009UFDF-7 variant, differing only in the shipping quantity per reel. The standard commercial version is distinct from the automotive-compliant DMP1009UFDFQ variant, which requires separate qualification documentation.

Replacement Considerations

DMP1009UFDF-7 is a verified substitute offering identical electrical specifications and package type, distinguished solely by a 3,000-unit tape and reel packaging quantity.

FAQ

What is the maximum steady-state continuous drain current?

The maximum continuous drain current is -11A at an ambient temperature of +25°C.

Is this component qualified for automotive applications?

The standard DMP1009UFDF-13 is not explicitly stated as automotive-qualified. An automotive-compliant version, DMP1009UFDFQ, is available under a separate datasheet.